Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• the fabricated piezotronic strain sensor. The gauge factor is as high as 30 under compressive or tensile stress, which indicates a high sensitivity of the strain sensor. Periodic strain tests show the high stability and repeatability of the sensor. The working mechanism of the strain sensor is

• effect; strain sensors; strain tests; top-down method; Introduction Due to the non-centrosymmetric structure of the group-III nitride semiconductor materials (e.g., GaN, AlN, and AlGaN), spontaneous polarization (Psp) and piezoelectric polarization induced by lattice mismatch (Plm) are inevitably

Mechanical properties of sol–gel derived SiO₂ nanotubes

• Boris Polyakov,
• Mikk Antsov,
• Sergei Vlassov,
• Leonid M Dorogin,
• Mikk Vahtrus,
• Roberts Zabels,
• Sven Lange and
• Rünno Lõhmus

Beilstein J. Nanotechnol. 2014, 5, 1808–1814, doi:10.3762/bjnano.5.191

• of the experimental technique on the measured values of the Young’s modulus was demonstrated by Rohlig et al. for ZnO NWs by comparing the resonant technique, nanoindentation, bending of bridges, and tensile and compressive strain tests [16]. In the case of SiO2 NTs it is also important to consider